By Alberto Bosio, Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel
Advanced try out equipment for SRAMs: powerful options for Dynamic Fault Detection in Nanoscaled Technologies
Modern electronics is dependent upon nanoscaled applied sciences that current new demanding situations by way of checking out and prognosis. thoughts are really at risk of defects given that they make the most the expertise limits to get the top density. This booklet is a useful advisor to the trying out and analysis of the most recent iteration of SRAM, some of the most standard form of thoughts. Classical equipment for checking out reminiscence are designed to deal with the so-called "static faults", yet those attempt suggestions will not be enough for faults which are rising within the most up-to-date Very Deep Sub-Micron (VDSM) applied sciences. those new faults, known as "dynamic faults", usually are not lined through classical algorithms and require the devoted attempt and analysis options awarded during this book.
- First ebook to provide entire, cutting-edge insurance of dynamic fault trying out for SRAM memories;
- Presents content material utilizing a "bottom-up" procedure, from the examine of explanations of malfunctions as much as the iteration of clever try out thoughts;
- Includes case reviews overlaying all reminiscence elements (core-cells, tackle decoders, write drivers, feel amplifiers, etc.);
- Proposes an exhaustive research of resistive-open defects in every one reminiscence part and the ensuing dynamic fault modeling.
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Additional info for Advanced Test Methods for SRAMs: Effective Solutions for Dynamic Fault Detection in Nanoscaled Technologies
On the faulty core-cell, a w0 operation is performed immediately followed by r0 operations. b. On the faulty core-cell, a w0 operation is done immediately followed by read (b1) or write (b2) operations on the core-cells placed on the same word line. c. On the faulty core-cell, a w0 operation is performed immediately followed by read or write operations on the core-cells on the same word line, but placed in other blocks in the same position than that of the faulty core-cell (highlighted core-cells in Fig.
These values are the minimal ones that can be sensitized by ‘read(s) after Analysis and Test of dRDF Fig. 8 write’ (wxrxM ) or ‘RESs after write’ (wxRESM ) sequences for different values of the clock period. 1 M . The higher efficiency of the sensitization patterns with RESs is true for all combinations of clock period and number of operations. 3 March Test Solutions Detecting dRDFs This sub-section shows how the experimental results presented above can be used to generate efficient test algorithms for dRDF detection.
6 –40 – 125 125 –40 125 ∼25k ∼8k ∼3k ∼130k/∼130k/80 M 100k/140 k ∼2 M TF RDF/DRDF/(dDRF) RDF/DRDF/(dDRF) dRDF/dDRF/DRF IRF/TF TF The experiments demonstrate that the detection sequences 1w0r0 and 0w1r1 are the most effective for sensitization of the faults linked to the core-cell resistive-open defects (Borri et al. 2005). 5, these faults appear in particular conditions. Although defect Df6 is in the loop, it presents a static behavior. 2 show that dynamic Read Destructive Faults (dRDFs) occur in the presence of defect Df4.